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Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells.
Learn MoreOxide ceramics include alumina, zirconia, silica, aluminum silicate, magnesia and other metal oxide based materials
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic devices with a built-in capacitor as the input and a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts
Search by Specification | Learn MoreSilicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically
Search by Specification | Learn MoreIndustrial ceramic materials are non-metallic, inorganic compounds that include oxides, carbides, or nitrides. They have high melting points, low wear resistance, and a wide range of electrical properties
Search by Specification | Learn MoreCeramic manufacturing services for parts and assemblies made of ceramic or refractory materials.
Search by Specification | Learn MoreThin film equipment uses vacuum processing for the modification of surfaces using CVD, PVD, plasma etching, and thermal oxidation or ion implantation.
Search by Specification | Learn MoreCeramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing, milling, precipitation, and other chemical processes
Search by Specification | Learn MoreFinishing compounds are used to improve surface finish or flatness. They often consist of fine abrasives in slurry, bar, powder or paste forms.
Search by Specification | Learn MoreRefractories and high temperature insulation include many different types of ceramic insulation, refractory shapes, and refractory cements.
Search by Specification | Learn MoreAbrasives and abrasive products are used to remove surface materials such as metal, ceramics, glass, plastics, and paint. Abrasives and abrasive products include discs, belts, blast machines and sandblasters, as well as sheets, rolls, and hand pads.
Search by Specification | Learn MoreCarbides and carbide materials include silicon carbide, tungsten carbide and titanium carbide as well as other compounds of a metal (Ti, W, Cr, Zr) or metalloid (B, Si) and carbon. Carbides have excellent wear resistance and high hot hardness
Learn MoreAbrasive grain and finishing media includes crushed grit, metal shot, glass beads or shaped chips for blasting, mass finishing (vibratory or tumbling), bonded wheels, coated abrasives and other applications.
Learn MoreCeramic tube and ceramic rod products are suitable for use in applications requiring high temperature strength, erosion resistance, electrical or thermal insulation, and other specialized characteristics.
Search by Specification | Learn MoreFerrous metals and alloys are based on iron and include carbon steels, alloy steels, stainless steels, cast iron, cast steel, maraging steel, and specialty or proprietary iron-based alloys.
Search by Specification | Learn More|
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Space Environment Accelerated Tester Integrity Testing Laboratory Inc.
Short Carbon Nanotubes (CNTs) Cheap Tubes, Inc.
Single Walled Nanotubes Cheap Tubes, Inc.
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Aluminum Oxide and Silicon Carbide
Aggressive surface cleaning. (read more)
Hexoloy® SP SiC is a sintered alpha silicon carbide material designed specifically for optimum performance in sliding contact applications such as mechanical seal faces and product lubricated bearings. This material improves upon the exceptional friction properties of Hexoloy® SA SiC (sintered alpha SiC) through the addition of spherical pores. (read more)
Hexoloy® SP SiC is a sintered alpha silicon carbide material designed specifically for optimum performance in sliding contact applications such as mechanical seal faces and product lubricated bearings. This material improves upon the exceptional friction properties of Hexoloy® SA SiC (sintered alpha SiC) through the addition of spherical pores. These pores are discrete, non-interconnecting and ... (read more)
Hexoloy® SA SiC is produced by pressureless sintering submicron silicon carbide powder. The sintering process results in a self-bonded, fine grain (less than 10µm) SiC product, which is extremely hard, lightweight and low in porosity. The material can be formed into complex shapes with greater than 98% theoretical density. (read more)
Hexoloy® SA SiC is produced by pressureless sintering submicron silicon carbide powder. The sintering process results in a self-bonded, fine grain (less than 10µm) SiC product which is extremely hard, lightweight and low in porosity. The material can be formed into complex shapes with greater than 98% theoretical density. Hexoloy® SA SiC is highly resistant to corrosion, erosion, sliding wear, ... (read more)
American Microsemiconductor is pleased to announce 1N5811 a silicon Diode. Silicon RECTIFIERS HIGH EFFICIENCY - ESP - 2.5 AMP TO 20 AMP (read more)
A FET with an oxide coating between gate and channel is called a MOSFET (metal-oxide semiconductor field effect transistor). (read more)
MemsTech has created "MSM1C - MSM2C" , the next generation of audio sensor technology. The MSM silicon microphone series will push the microphone industry into the age of silicon technology, bringing new performance and innovation. They have a high sensitivity range of -20dB to -50dB with a frequency range of 20Hz to 16KHz, and a SNR >57. (read more)
Ceramic components in electronic devices must resist high mechanical, thermal, and electrical loads while simultaneously performing with the utmost reliability. Our advanced high-performance materials are designed to meet these needs. (read more)
There are several important advantages to bearing performance that are due to the improved surface characteristics of silicon nitride balls. Because the microstructure of silicon nitride can be uniformly engineered to sub-micron grain size, the surface of a silicon nitride ball can be finished to <0.15 micro-inch Ra and the roundness is often better than 0.00001 tolerance. This precision res... (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
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| 02H6289 | Newark | Tyco Electronics / Amp | Tantalum&Niobium Oxide | Tab Housing, 4Way; Ways, No. Of:4; Series:Superseal; Current Rating:14A; Depth, External:16.3Mm; Diameter, Cable Max:6.3Mm; Diameter, Cable Min:2.6Mm; Length / Height, External:42Mm; Material:Silicon Rubber; Resistance, Rohs Compliant: Yes |
| 11N7880 | Newark | Fairchild Semiconductor | Silver Oxide | Transistor, Digital Npn Sot-523F; Transistor Type:Npn Epitaxial Silicon Transistor; Voltage, Vceo:50V; Current, Ic Continuous A Max:100Ma; Voltage, Vce Sat Max:0.3V; Power Dissipation:200Mw; Hfe, Min:68; Ft, Typ:250Mhz; Case Rohs Compliant: Yes |
| 37C5383 | Newark | MCM | Tantalum&Niobium Oxide | Transistor, Type: Pnp, Function: High Speed Switch, Material: Silicon |
| 38C6468 | Newark | MCM | Tantalum&Niobium Oxide | General Purpose Silicon Rectifiers, Output Current: 2.5 A, Peak Reverse Voltage: 1000 V, Case Style: Do-41 |
| 15J7680 | Newark | Lapp Kabel | Tantalum&Niobium Oxide | Conduit, M20, Black; Colour:Black; Depth, Panel Cutout:13Mm; Diameter, External:15.8Mm; Ip Rating:Ip67; Material:Pa, Silicon-Free; Temp, Op. Max:100(Degree C); Temp, Op. Min:-30(Degree C); Thread Type:M20 X 1.5; Width, Af Nut:23.0Mm; Rohs Compliant: Na |
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Silicon - Wikipedia, the free encyclopedia Silicon is widely used in semiconductors because it remains a semiconductor at higher temperatures than the semiconductor germanium and because its |
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Silicon dioxide - Wikipedia, the free encyclopedia Silicon sulfide Other cations Carbon dioxide Germanium dioxide Tin(IV) oxide Lead(IV) oxide |
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Silicon Dioxide The ability to form a native oxide was one of the primary processing considerations which led to silicon becoming the dominant semiconductor material |
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Silicon Wafers Silicon Nitride Thermal Oxide Pyrex Fused Silica Quartz Germanium Zinc Gallium Nitride Gallium Arsenide Sapphire Glass Indium Phosphide See University Wafer Information |
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Silicon Silicon element facts Search by name or symbol: Si 28.0855 Silicon General | States | Energies | |
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Silicon oxide Silicon oxide Back One Your Search returned these results: See AZoM Information |
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Silicon Silicon is the second most abundant element, and makes up 25.7% of the earth?s crust by weight (oxygen being the most). It is not found free in See AZoM Information |
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Silicon Silicon is not found free in nature, but occurs chiefly as the oxide and as silicates. |
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Silicon Quest International, Inc. Silicon Quest International, Inc. Search the website HiRes Silicon NTD Silicon PFZ Silicon See Silicon Quest International, Inc. Information |
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Silicon Wafers Silicon, SOI, silicon on insulator, glass, germanium, deposition, thin films, oxide, nitride, TiN, Wti, Al, Al alloys, Cu, W, Cr, Ni, NiV7, TaN, Ti, See Polishing Corporation of America Information |